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MELT FOR ELECTROCHEMICAL DEPOSITION OF THIN FILM TUNGSTEN OR MOLYBDENUM OXIDE BRONZE COATS

机译:电解沉积薄膜钨或氧化钼青铜的熔体

摘要

the invention u043eu0442u043du043eu0441u0438u0442u0441u00a0 ways of electrochemical u043du0430u043du0435u0441u0435u043du0438u00a0 coatings of melt adhesive and can be used in the manufacture of thin-film coatings of oxy u0434u043du044bu0445 u0431u0440u043eu043du0437 transition metals in multilayer structures of the optical reflecting device closures requires information and time display.the purpose of u0438u0437u043eu0431u0440u0435u0442u0435u043du0438u00a0 - receiving coating with u0442u0435u043au0441u0442u0443u0440u0438u0440u043eu0432u0430u043du043du043eu0439 structure, to improve their adhesion and u044du043bu0435u043au0442u0440u043eu0445u0440u043eu043cu043du044bu0445 characteristics. the steel u0434u043bu00a0 electrochemical u043du0430u043du0435u0441u0435u043du0438u00a0 thin-film coatings based on tungsten or molybdenum oxide u0431u0440u043eu043du0437 contains the components with the following u0441u043eu043eu0442u043du043eu0448u0435u043du0438 and, the iau.%, alkali metal nitrate, 20 - 72, tungsten or molybdenum trioxide 3 - 5, alkali metal nitrite, 25 to 75.the introduction of nitrites u043du0430u0442u0440u0438u00a0 melted u043fu043eu0437u0432u043eu043bu00a0u0435u0442 to u0438u0437u0434u0435u043bu0438u00a0u0445 textured film thickness of 1.0 to 2.5 microns with a higher contrast, less times u043eu043au0440u0430u0448u0438u0432 u0430u043du0438u00a0 and u043eu0431u0435u0441u0446u0432u0435u0447u0438u0432u0430u043du0438u00a0 and more necessary. 2, table 2).
机译:本发明的电化学方法 u043d u0442 u043d u043e u0441 u0438 u0442 u0441 u00a0电化学方式 u043d u0430 u043d u0435 u0441 u0435 u043d u0438 u00a0涂料可用于在光学反射装置盒盖的多层结构中,过渡膜中的过渡金属的氧化膜的制造需要信息和时间的显示。用途u0437 u043e u0431 u0440 u0435 u0442 u0435 u043d u0438 u00a0-使用 u0442 u0435 u043a u0441 u0442 u0443 u0440 u0438 u0440 u043e u0432 u0430 u0435 u043a u0441 u043d u043e u0439结构,以改善其附着力和 u044d u043e u043b u0435 u043a u0442 u0440 u043e u0445 u0440 u043e u043c u043d u044b u0445特性。基于钨或氧化钼的薄膜 u0434 u043b u00a0电化学 u043d u0430 u043d u0435 u0441 u0435 u043d u0304 u00a0包含以下成分以及以下 u0441 u043e u043e u0442 u043d u043e u0448 u0435 u043d u0438和10%的碱金属硝酸盐20-72,钨或三氧化钼3-5,碱金属亚硝酸盐, 25至75.将亚硝酸盐 u043d u0430 u0442 u0440 u0438 u00a0融化了 u043f u043e u0437 u0432 u043e u043b u00a0 u0435 u0442至 u0438 u0437 u0434 u0435 u043b u0438 u00a0 u0445厚度为1.0到2.5微米的纹理膜,具有更高的对比度,更少的次数 u043e u043a u0440 u0430 u0448 u0438 u0432 u0430 u043d u0438 u00a0和 u043e u0431 u0435 u0441 u0446 u0432 u0435 u0447 u0438 u0432 u0430 u043d u0438 u00a0和更多必要的文件。 2,表2)。

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