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semiconductor, epitaxial grown on a substrate of different lattice constant and application for multiple semiconductor devices.
semiconductor, epitaxial grown on a substrate of different lattice constant and application for multiple semiconductor devices.
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机译:半导体,外延生长在不同晶格常数的衬底上,并应用于多种半导体器件。
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摘要
A component of semiconductor material deposited by epitaxial growth on a substrate having a predetermined and different lattice parameter consists of an alternate succession of layers of a first type and layers of a second type deposited on the substrate. The lattice parameter of the first type of layers is substantially matched with the lattice parameter of the substrate. In the case of the second type of layers, the lattice parameter is matched and even equal to that of the first type of layers. A component having a lattice parameter equal to that of the second type of layers is formed on the last layer of the second type. Moreover, the energy gaps of the two types of layers are different.
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