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METHOD FLATTENING DERIVATIVE FORMED ON SEMICONDUCTOR SUBSTRATE AND ITS DEVICE

机译:半导体基质上形成微分的微分方法及其装置

摘要

PURPOSE: To provide a method and a device for flattening the surface of a dielectric, deposited on a semiconductor wafer. CONSTITUTION: The wafer is press-contacted downward on a table 20 covered with an abradant. Thus, the upper surface of the inter-layer dielectric is contacted with the abradant. By rotationally moving the wafer with respect to the table, the protruding section of an inter-layer dielectric 14 can be easily removed by the abradant. After flattening, the difference in the height of steps is suppressed to a minimum by simultaneously cooling the table and the abradant during a polishing process.
机译:目的:提供一种用于平坦化沉积在半导体晶片上的电介质表面的方法和装置。组成:将晶片向下压在覆盖有研磨剂的工作台20上。因此,层间电介质的上表面与研磨剂接触。通过使晶片相对于工作台旋转地移动,可以容易地通过研磨剂去除层间电介质14的突出部分。压平后,通过在抛光过程中同时冷却工作台和研磨剂,将台阶高度的差异抑制到最小。

著录项

  • 公开/公告号JPH04216627A

    专利类型

  • 公开/公告日1992-08-06

    原文格式PDF

  • 申请/专利权人 INTEL CORP;

    申请/专利号JP19910057650

  • 发明设计人 SEIICHI MORIMOTO;

    申请日1991-03-01

  • 分类号H01L21/304;B24B37/10;B24B49/14;B24B55/02;H01L21/3105;H01L21/768;

  • 国家 JP

  • 入库时间 2022-08-22 05:41:41

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