TWO-WAY INJECTION TYPE MULTI-MODE OSCILLATING SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE:To enable multi-mode oscillation by performing carrier injection from two directions and placing a split electrode on a side of an upper clad layer of an active layer. CONSTITUTION:A highly resistant AlGaAs layer 101 is formed on a semi- insulating substrate 100, and further after a GaAs active layer 102, a p-AlGaAs clad layer 103 and a p-GaAs cap layer 106 are formed, both right and left sides are etched to be dug where n-AlGaAs clad layers 104a, 104b are buried. Further after cap layers n-GaAs 105a, 105b are formed, electrodes 107a, 107b and a plurality of split electrodes 108a to 108c are formed on the respective cap layers. When current is supplied between the electrodes 108a, 108b, 108c and the electrodes 107a, 107b in such a constitution, a carrier is injected from two directions into the active layer wherein the injection can be independently performed so that highly efficient multi-mode laser oscillation is possible.