首页> 外国专利> CRYSTAL GROWING DEVICE WITH MOLECULAR BEAM AND CRYSTAL GROWTH USING THE SAME DEVICE

CRYSTAL GROWING DEVICE WITH MOLECULAR BEAM AND CRYSTAL GROWTH USING THE SAME DEVICE

机译:具有分子束的晶体生长装置,并且使用相同的装置进行晶体生长

摘要

PURPOSE:To efficiently carry out stable epitaxial growth by equipping plural turbo-molecular pumps to evacuate a crystal growing chamber in vacuum in series and providing the connecting part between the pumps with gas inlet mechanism to control flow rate. CONSTITUTION:Turbo-molecular pumps 12A and 12B are connected in series in a crystal growing chamber 1 and an oil trap 13 and a rotary pump 14 are coupled with the delivery side. The connecting part of the pumps 12A (first stage) and 12B (first stage) is equipped through a stopper valve 16, a mass flow controller 18 and a stopper valve 17 with a high-purity gas bomb 15. In the constitution, the crystal growing chamber 1 is evacuated by operating the pumps 12A, 12B and 14, a given flow rate of nitrogen gas from the bump 15 is fed to the crystal growing chamber 1 to carry out baking. After the baking is stopped and the chamber is returned to room temperature, a liquid nitrogen shroud 6 is charged with liquid nitrogen and crystal is grown on a substrate 2 by conventional procedure. Consequently, contamination by the rotary pump 14 is prevented while maintaining exhaust ability of large volume to efficiently give high-quality epitaxial growth crystal layer.
机译:目的:为了有效地进行稳定的外延生长,需要配备多个涡轮分子泵,以串联方式抽空真空中的晶体生长室,并在泵之间的连接部分设置进气机构以控制流量。组成:涡轮分子泵12A和12B在晶体生长室1中串联连接,集油器13和旋转泵14与输出侧相连。泵12A(第一级)和12B(第一级)的连接部分通过截止阀16,质量流量控制器18和截止阀17配备有高纯度气体炸弹15。通过操作泵12A,12B和14将生长室1抽成真空,将来自凸块15的给定的氮气流量供给到晶体生长室1以进行烘烤。在停止烘烤并且使室回到室温之后,在液氮罩6中填充液氮,并且通过常规程序在基板2上生长晶体。因此,在保持大容量的排气能力的同时,防止了旋转泵14的污染,从而有效地提供了高质量的外延生长晶体层。

著录项

  • 公开/公告号JPH0431394A

    专利类型

  • 公开/公告日1992-02-03

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP19900134413

  • 发明设计人 SAITO JUNJI;

    申请日1990-05-24

  • 分类号C30B23/08;F04D19/04;H01L21/203;

  • 国家 JP

  • 入库时间 2022-08-22 05:39:54

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