首页> 外国专利> MOLECULAR BEAM CRYSTAL GROWING APPARATUS AND PROCESS FOR MOLECULAR BEAM CRYSTAL GROWTH USING THE APPARATUS

MOLECULAR BEAM CRYSTAL GROWING APPARATUS AND PROCESS FOR MOLECULAR BEAM CRYSTAL GROWTH USING THE APPARATUS

机译:分子束晶体生长装置以及使用该装置的分子束晶体生长方法

摘要

PURPOSE: To enable the accurate determination of a substrate temperature by a radiation thermometer during the growth of a crystal by a molecular beam crystal growing process. ;CONSTITUTION: The objective apparatus is provided with a molecular beam source cell 32 placed at a position able to view a substrate 41 held on a substrate holder 31, a chopper 37 placed between the molecular beam source cell 32 and the substrate holder 31 at a position to cover the molecular beam source cell 32 and capable of freely shielding the radiation directing from the molecular beam source cell 32 toward the substrate 41, a radiation thermometer 35 placed at a position to receive the infrared ray generated from the substrate 41 to measure the temperature of the substrate 41 and a phase-detection amplifier 36 connected to the radiation thermometer 35 to perform the detection synchronous to the period of the chopper 37 shielding the radiation from the molecular beam source cell 32.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:为了能够在分子束晶体生长过程中的晶体生长过程中,通过辐射温度计准确确定衬底温度。 ;组成:该物镜装置具有分子束源单元32,其位于能够观看保持在基板支架31上的基板41的位置;斩波器37,其位于分子束源单元32与基板支架31之间。在覆盖分子束源单元32的位置并且能够自由地屏蔽从分子束源单元32朝向基板41的辐射的位置,辐射温度计35被放置在接收从基板41产生的红外线以测量辐射的位置。基板41的温度和连接到辐射温度计35的相位检测放大器36的温度,以与斩波器37屏蔽来自分子束源单元32的辐射的周期同步进行检测。版权所有:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH05117080A

    专利类型

  • 公开/公告日1993-05-14

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP19910127761

  • 发明设计人 IMANISHI KENJI;

    申请日1991-05-30

  • 分类号C30B23/08;H01L21/203;

  • 国家 JP

  • 入库时间 2022-08-22 05:17:35

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