ELECTROSTATIC RESISTANCE INCREASING LATERAL P-N-P TRANSISTOR UTILIZING LATCH VOLTAGE OF N-P-N TRANSISTOR

摘要

PURPOSE: To improve electrostatic resistance by separately including an n+ - diffusion layer, into a diffusion layer for an emitter and a collector. CONSTITUTION: A P- -base layer 10, an n+ -buried layer 11, and an n- -epitaxial layer 12 are formed successively, a P-diffusion layer 13 for emitter, a P-diffusion layer 14 for collector, and an n+ -diffusion layer 15 for base are formed in the n- -epitaxial layer 12, an n+ -diffusion layer 20 is formed in the diffusion layer 14 for collector, thus connecting a collector electrode 14', and forming a discharge path by the latch voltage of an NPN transistor Q12 . Electrostatic resistance is higher in the case of the latch voltage of the NPN transistor Q12 , as compared with the discharge path of the breakdown voltage of a PNP transistor Q11 . Therefore, a circuit operation operates with a lateral PNP transistor, thus improving the electrostatic resistance.