procedures for generating a defined arsendotierung in siliziumhalbleitersubstraten.

摘要

On a silicon wafer, in the surface of which moats have been etched with a high aspect ratio, an As-contg. glass is deposited by thermal decompsn. in the gasphase of tetra-ethyl-ortho-silicate (TEOS) and triethyl-arsenate (TEA): AsO(OC2H5)3. The decompsn. occurs at 650-750 deg.C and a pressure of 0.5-1.1 mbar. The gas-mixt. used comprises O2.