mos feldeffekt - transistorstruktur with extremely shallow source / drain areas and silizid - anschlussbereichen, and methods for their production in an integrated circuit.

摘要

Between the gate electrode (3) and the oxide region (2) are arranged selective-epitaxially produced monocrystalline silicon layers which form diffusion sources for production of source/drain zones (6) in the substrate, and the connection zones to the source drain contact (7). In a CMOS circuit the structure is applied to each transistor, and the silicon layer has a maximal thickness of around 400 nm with its doping so adjusted that the dopant profile in the substrate is unaltered by it. Alternatively, the doping in the upper region of the layer runs homogenously, with an abrupt doping step to the substrate.S