Forming recombination centres in semiconductor component - irradiating semiconductor by ions of preset energy and diffusing recombination atoms

摘要

The recombination centres are formed in a semiconductor component body by ion implantation. First the body is irradiated by ions of preset energy, followed by diffusing atoms as recombination centres into the body at least to the penetration depth of the ions. Pref. the diffusion temp. is so chosen that, in a preset semiconductor vol., the number of grid defects to be repaired is less than the number of diffused atoms.. Protons on helium cores may be used, and gold on platinum atoms may be used for diffusion. The ion energy is typically so chosen that the produced grid faults in vertical direction lie in a preset zone of the semiconductor body. USE/ADVANTAGE - For thyristors, diodes. Adjustment of minority change carries service life, with controlled recombination level and temp. stability.