VHF semiconductor device with silicon germanium superlattice layers - on alloy layer used as gunn element, suitable for prodn. by silicon technology

摘要

VHF semiconductor device has a series of SinGem superlattice layers grown on a SiGe alloy layer. The period length (L = n + m) of the superlattice is less than 40 layers of atoms and such that a double degenerated min. of the Si conduction band structure has an inflection point in the centre of the Brillouin zone. Two contacts are arranged geometrically so that one electric field component of the potential applied between these contacts is parallel to the layers of the superlattice. The superlattice layers are n-doped. The device is formed on Si by monolithic integration with other semiconductor devices. USE/ADVANTAGE - The device is claimed for use as Gunn element. It is esp. suitable for generating, multiplying and amplifying VHF oscillations. It can be produced by SI technology and has good HF properties.