Hetero-epitaxial structure including buffer layer - for adjusting or eliminating residual stress in epitaxial layer

摘要

In a hetero-epitaxial structure having a semiconductive or crystalline non-conductive substrate and an epitaxial crystalline semiconductive surface layer held under a desired stress, a buffer layer, of semiconductive material different from the substrate and surface layer materials and of thickness greater than the critical thickness of the substrate, is located between the substrate and the surface layer and in contact with the surface layer for determining the residual stress of the surface layer at a desired temp. in dependence on the lattice parameters and thermo-elastic coefficients of the substrate and surface layer materials. Prodn. of the structure is also claimed. USE/ADVANTAGE - The structure is used in prodn. of opto- electronic, micro-electronic or photovoltaic devices (claimed). The buffer layer allows adjustment or even elimination of stress in the epitaxial layer.