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Superconducting device structures employing anisotropy of the material energy gap
Superconducting device structures employing anisotropy of the material energy gap
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机译:利用材料能隙各向异性的超导器件结构
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摘要
A high T.sub.c oxide superconductive switching device [10] formed on a substantially planar substrate [18] includes a base electrode [12] comprised of a layer or film of anisotropic superconducting material. The layer has a first crystalline axis [c] along which a magnitude of an energy gap of the material is less than an energy gap of the material along other crystalline axes. The superconductive switching device further includes at least one injector electrode [14] forming a planar [16] or an edge tunneling junction with the base electrode for injecting, under the influence of a bias potential eV, quasiparticles into the base electrode. The first crystalline axis is aligned in a predetermined manner with the tunneling junction for optimizing a quasiparticle injection efficiency of the tunneling junction.
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