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Programmable read only memory using stacked-gate cell erasable by hole injection
Programmable read only memory using stacked-gate cell erasable by hole injection
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机译:使用堆叠栅单元的可编程只读存储器,可通过空穴注入擦除
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摘要
An electrically erasable programmable nonvolatile memory device includes a plurality of memory cells. The memory device has architecture similar to or same as an UV-EPROM. Erasure operating is performed by applying negative voltage to a control gate so as to inject holes into the floating gate.
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