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METHOD FOR POLING SINGLE CRYSTAL OF LINBO3

机译:LINBO3单晶极化方法

摘要

PURPOSE: To obtain single crystal of LiNbO3 having slight warpage and strain by impressing a DC electric field to growth crystal of LiNbO3 by Czochralski method by setting the initial side of crystal growth as a cathode and the end side as an anode. ;CONSTITUTION: The end side of crystal growth of LiNbO3 growing crystal 1 by Z-axis pulling by Czochralski method is placed through a sintered LiNbO3 porcelain 2b on a platinum plate 3b, a platinum plate 3a is loaded through a sintered LiNbO3 porcelain 2a on the growing crystal 1 and a weight 4 is placed on the platinum plate. A DC electric field is impressed by setting the platinum plate 3a as a cathode and the platinum plate 3b as an anode and the growing crystal is heated to 1,150-1,190°C within 10-20 hours, maintained for 1-5 hours and annealed.;COPYRIGHT: (C)1993,JPO&Japio
机译:用途:通过用直拉法将直流电场施加到生长在LiNbO 3 的生长晶体上,并设置晶体的初始面,从而获得具有轻微翘曲和应变的LiNbO 3 单晶生长作为阴极,端面作为阳极。 ;构成:通过切克劳斯基方法通过Z轴拉动生长LiNbO 3 的晶体1的晶体生长的端部穿过铂板上的烧结LiNbO 3 瓷2b。如图3b所示,通过烧结的LiNbO 3 瓷2a将铂板3a装载到生长的晶体1上,并且将重物4放置在铂板上。通过将铂板3a作为阴极而将铂板3b作为阳极来施加DC电场,并且将生长的晶体在10-20小时内加热至1,150-1,190℃,保持1-5小时并退火。 ;版权:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH05262598A

    专利类型

  • 公开/公告日1993-10-12

    原文格式PDF

  • 申请/专利权人 NIPPON MEKTRON LTD;

    申请/专利号JP19920062232

  • 发明设计人 SEKINE HIROYUKI;

    申请日1992-03-18

  • 分类号C30B29/30;C30B15/00;C30B33/04;

  • 国家 JP

  • 入库时间 2022-08-22 05:21:24

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