SCHOTTKY JUNCTION TYPE SEMICONDUCTOR PHOTODETECTOR

摘要

PURPOSE: To attenuate a dark current by introducing a damage onto the semiconductor surface under a Schottky junction metal electrode. ;CONSTITUTION: Before formation of the metal electrodes 1 and 2 with which an anode electrode and a cathode electrode, consisting of Schottky metal, are constituted, a SiN mask layer is deposited, for example, by CVD on the surface of a semiconductor 3. Then, SiN, as a mask layer, is pattern-etched on the formation part of the metal electrodes 1 and 2 by RIE using CF₄ and H₂ gas, Ar gas and the like, for example, and a window is provided on the electrode forming part. Subsequently, ion-damage 4 is introduced under the formation part of the metal electrodes 1 and 2 of the semiconductor 3 by implanting Ar ions. As a result, the dark current, especially on the normal working bias voltage region can be decreased.;COPYRIGHT: (C)1993,JPO&Japio