首页> 外国专利> - Garphene-Semiconductor Schottky Junction Photodetector of having tunable Gain

- Garphene-Semiconductor Schottky Junction Photodetector of having tunable Gain

机译:-具有可调增益的石墨烯半导体肖特基结光电探测器

摘要

A photoelectric device using graphene is disclosed. A single layer graphene channel is formed on the n-type doped semiconductor substrate. One end of the graphene channel is connected to the source electrode and is physically separated from the drain electrode. The light that has passed through the gate insulating layer and the gate electrode issues electron-hole pairs at the interface of the graphene channel and the semiconductor substrate forming the Schottky junction, and forms a photocurrent by the Schottky barrier. Further, the Schottky barrier is changed according to the applied gate voltage, and the photocurrent through the work is changed.
机译:公开了使用石墨烯的光电器件。在n型掺杂的半导体衬底上形成单层石墨烯沟道。石墨烯通道的一端连接到源电极,并与漏电极物理上分开。穿过栅绝缘层和栅电极的光在形成肖特基结的石墨烯沟道与半导体衬底的界面处发出电子-空穴对,并通过肖特基势垒形成光电流。此外,肖特基势垒根据所施加的栅极电压而改变,并且通过工件的光电流也改变。

著录项

  • 公开/公告号KR101938934B1

    专利类型

  • 公开/公告日2019-04-10

    原文格式PDF

  • 申请/专利权人 광주과학기술원;

    申请/专利号KR20160024910

  • 发明设计人 이병훈;장경은;유태진;황현준;

    申请日2016-03-02

  • 分类号H01L31/04;H01L29/16;H01L31/0224;

  • 国家 KR

  • 入库时间 2022-08-21 11:49:22

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号