首页> 外国专利> METHOD FOR INHIBITING WARPAGE OF WAFER DURING FORMATION OF POLYCRYSTALLINE FILM ON WAFER

METHOD FOR INHIBITING WARPAGE OF WAFER DURING FORMATION OF POLYCRYSTALLINE FILM ON WAFER

机译:晶圆上多晶膜形成过程中抑制晶圆翘曲的方法

摘要

PURPOSE:To inhibit the warpage of a wafer put on a support without causing waving by pressing a circular pressing plate against the top of the periphery of the wafer with a circular elastic body in-between. CONSTITUTION:A wafer 4 is put on a support 2 set in an inert gas atmosphere 1 and a circular pressing plate 7 is placed on the wafer 4 with a circular elastic body 10 in-between and pressed against the top of the periphery of the wafer 4 with clamping screws 8. The plate 7 has an opening 7a whose size is equal to the size of the opening 10a in the elastic body 10. The support 2 is then heated with a heating source 3 and rotated, particles 5 of sprayed molten silicon are deposited on the wafer 4 and the resulting molten silicon layer 6 is cooled to form a polycrystalline layer 6a.
机译:目的:通过在其间具有圆形弹性体,将圆形压板压向晶片外围的顶部,以防止放置在支撑物上的晶片翘曲而不会引起波动。组成:将晶片4放在惰性气体气氛1中的支撑物2上,将圆形压板7置于晶片4上,并在其间放置圆形弹性体10并将其压在晶片外围的顶部如图4所示,板7具有夹紧螺钉8。板7具有开口7a,其尺寸等于弹性体10中的开口10a的尺寸。然后用加热源3加热支撑体2并旋转,使喷涂的熔融硅颗粒5旋转将沉积的硅沉积在晶片4上,将得到的熔融硅层6冷却以形成多晶层6a。

著录项

  • 公开/公告号JPH0513912B2

    专利类型

  • 公开/公告日1993-02-23

    原文格式PDF

  • 申请/专利权人 HOKUSAN KK;

    申请/专利号JP19890216977

  • 发明设计人 YOKOYAMA TAKASHI;

    申请日1989-08-23

  • 分类号C30B28/04;C23C16/44;C23C16/458;C30B28/06;C30B28/14;H01L21/205;H01L21/208;

  • 国家 JP

  • 入库时间 2022-08-22 05:19:57

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