CONTROLLING METHOD FOR CARRIER CONCENTRATION OF P-TYPE CADMIUM MERCURY TELLURIDE

摘要

PURPOSE: To set desired carrier concentration by next annealing even if carrier concentration of p-type HgCdTe is deviated from a desired value by setting an annealing temperature according to mercury cavity forming energy and controlling the carrier concentration. ;CONSTITUTION: When a carrier concentration of p-type cadmium mercury telluride is controlled by a mercury annealing method, even if the concentration is deviated from a desired value, an annealing temperature is set according to mercury cavity forming energy, and the concentration is controlled. For example, a p-type HgCdTe crystal 1 and mercury 2 are introduced into a quartz tube 3, the tube is evacuated, then sealed, and introduced into a two-zone type furnace. A carrier concentration n₁ after annealing for 8 hours with 320°C of a crystal temperature and constant 150°C of a mercury temperature is 3×10¹⁶cm^-3, and a desired carrier concentration n₂ is 1×10¹⁶cm^-3. The numeric values are substituted for a predetermined formula and, when activation energy E (mercury cavity forming energy) is 1.2eV, next annealing temperature is obtained as 293°C.;COPYRIGHT: (C)1993,JPO&Japio