首页> 外国专利> WAVEGUIDE TYPE SHG ELEMENT HAVING PARTIAL POLARIZATION INVERSION STRUCTURE AND ITS PRODUCTION

WAVEGUIDE TYPE SHG ELEMENT HAVING PARTIAL POLARIZATION INVERSION STRUCTURE AND ITS PRODUCTION

机译:具有部分极化反演结构的Waveguided型SHG元件及其生产

摘要

PURPOSE: To obtain the waveguide type SHG element having a high conversion efficiency without degrading the intrinsic characteristics possessed by LiNbO3, and without optical damages. ;CONSTITUTION: This waveguide type SHG element consists of an LiNbO3 single crystal 2 or the LiNbO3 single crystal having the partial polarization inversion regions constituted by forming the partial polarization inversion regions 5 where only the non-diffused parts of MgO are inverted on the +c surface within the respective waveguides of the LiNbO3 single crystal thin film formed on an LT substrate. This is subjected to an inversion treatment at the temp. between the Curie point of the LiNbO3 single crystal diffused with the MgO and the Curie point of the LiNbO3 single crystal not diffused with the MgO, by that the domains of the undiffused parts are inverted.;COPYRIGHT: (C)1993,JPO&Japio
机译:目的:获得具有高转换效率的波导型SHG元件,而不会降低LiNbO 3 所具有的固有特性,并且不会造成光学损伤。 ;组成:该波导型SHG元件由LiNbO 3 单晶2或LiNbO 3 单晶组成,该LiNbO 3 单晶具有通过形成部分偏振反转区域而构成的部分偏振反转区域参照图5,其中在LT衬底上形成的LiNbO 3 单晶薄膜的各个波导内,在+ c表面上仅MgO的未扩散部分反转。在该温度下对其进行反转处理。随MgO扩散的LiNbO 3 单晶的居里点与不随MgO扩散的LiNbO 3 单晶的居里点之间,未扩散的零件倒置。;版权所有:(C)1993,JPO&Japio

著录项

  • 公开/公告号JPH05289131A

    专利类型

  • 公开/公告日1993-11-05

    原文格式PDF

  • 申请/专利权人 IBIDEN CO LTD;

    申请/专利号JP19920113258

  • 发明设计人 HIRAMATSU YASUJI;ONO TETSUSHI;EN HONCHIN;

    申请日1992-04-07

  • 分类号G02F1/37;

  • 国家 JP

  • 入库时间 2022-08-22 05:17:35

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