METHOD OF FORMING OHMIC CONTACT SECTION ON N-DOPING SEMICONDUCTOR LAYER OF III-V COMPOUND SEMICONDUCTOR

摘要

PURPOSE: To form an ohmic contact part on an N-doping semiconductor layer of a III-V compound semiconductor, having low contact resistance and high reflectance with respect to a beam of visible spectrum region and a near-infrared part. CONSTITUTION: An AuGe layer is formed on an N-type III-V compound semiconductor, and the thickness of the AuGe layer is 5 to 50nm and a germanium concentration is at most 1wt%. A 200 to 600nm - thick Au layer is provided on an AuGe layer. This laminate is subjected to annealing at about 360 to 390 deg.C for 40 to 180 minutes or to a quick thermal annealing at 430 to 480 deg.C for 5 to 20 seconds to relieve stresses. Therefore, this metallic semiconductor contact part is appropriate, especially as a whole rear contact part for a semiconductor light-emitting diode, which emits an infrared light or visible light.