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MANUFACTURE OF HIGH-TEMPERATURE RESISTING POSITIVE RESIST AND HIGH-TEMPERATURE RESISTING RELIEF STRUCTURE

机译:耐高温正电阻的制造及耐高温救济结构

摘要

PURPOSE: To enhance storage stability by using an oligomer or polymer benzoxazole precursor and diazoquinone as a base and converting them into a specified hydroxypolyamide. CONSTITUTION: The high heat sensitive positive resist made from as a base the diazoquinone and the oligo- or poly-benzoxazole precursor represented by the formula in which each of R', R1 , R1 ', and R2 is an aromatic group; R3 is an aliphatic or alicyclic or aromatic group having at least one alkenyl or alkynyl group; and each of n1 -n3 is as follows; n1 is 1-100, n2 =0, and n3 =0; or n1 =1-100, n2 =1-100, n3 =0; n2 =1-100, n1 =0, n3 =0; n1 -n3 =1-100 (but RR' and/or R1 R1 ') or n1 =1-100, n3 =1-100, and n2 =0 (but RR' and/or R1 R1 ') (but n1 +n2 +n3 =3).
机译:用途:通过使用低聚物或聚合物苯并恶唑前体和重氮醌为基础,并将它们转化为指定的羟基聚酰胺,以提高存储稳定性。组成:高热敏正性抗蚀剂,由重氮醌和下式表示的低聚或聚苯并恶唑前体制成,其中R',R1,R1'和R2均为芳基; R3是具有至少一个烯基或炔基的脂族或脂环族或芳族基团; n1-n3分别如下。 n1是1-100,n2 = 0,n3 = 0;或n1 = 1-100,n2 = 1-100,n3 = 0; n2 = 1-100,n1 = 0,n3 = 0; n1 -n3 = 1-100(但RR'和/或R1 R1')或n1 = 1-100,n3 = 1-100和n2 = 0(但RR'和/或R1 R1')(但n1 + n2 + n3> = 3)。

著录项

  • 公开/公告号JPH05197153A

    专利类型

  • 公开/公告日1993-08-06

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号JP19920139694

  • 申请日1992-05-01

  • 分类号G03F7/039;C08L77/10;G03F7/022;G03F7/30;H01L21/027;H01L21/312;

  • 国家 JP

  • 入库时间 2022-08-22 05:15:00

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