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Manufacturing method of high heat resistant positive resist and high heat resistant relief structure

机译:高耐热正抗蚀剂及高耐热浮雕结构的制造方法

摘要

Inexpensive high-temperature-resistant positive resists based on oligomeric and/or polymeric polybenzoxazole precursors and diazoquinones have a high storage stability if the polybenzoxazole precursors are hydroxypolyamides having the following structure: IMAGE where R, R*, R1, R1* and R2 are aromatic groups, R3 is an aliphatic, cycloaliphatic or aromatic group containing at least one alkenyl or alkynyl group, and the following applies to n1, n2 and n3: n1 = 1 to 100, n2 and n3 = 0, or n1 and n2 = 1 to 100, n3 = 0, or n2 = 1 to 100, n1 and n3 = 0, or n1, n2 and n3 = 1 to 100 (where R NOTEQUAL R* and/or R1 NOTEQUAL R@), or n1 and n3 = 1 to 100, n2 = 0 (where R NOTEQUAL R* and/or R1 NOTEQUAL R@), with the proviso that n1 + n2 + n3 /= 3.s
机译:如果聚苯并恶唑前体是具有以下结构的羟基聚酰胺,则基于低聚和/或聚合的聚苯并恶唑前体和重氮醌的廉价耐高温正性抗蚀剂具有高的存储稳定性:其中R,R *,R1,R1 *和R2 R3是芳族基团,R3是包含至少一个烯基或炔基的脂族,脂环族或芳族基团,并且以下条件适用于n1,n2和n3:n1 = 1至100,n2和n3 = 0,或者n1和n2 = 1至100,n3 = 0或n2 = 1至100,n1和n3 = 0或n1,n2和n3 = 1至100(其中R NOTEQUAL R *和/或R1 NOTEQUAR R @)或n1和n3 = 1到100,n2 = 0(其中R NOTEQUAL R *和/或R1 NOTEQUAR R @),条件是n1 + n2 + n3> / = 3.s

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