POLYCRYSTALLINE CVD DIAMOND SUBSTRATE FOR EPITAXIALLY GROWING SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE: To manufacture a single-crystal semiconductor element that is formed while being adhered to a polycrystalline CVD diamond substrate. CONSTITUTION: First, a single crystal of silicon that is heated to a high CVD diamond generation temperature is arranged in a reaction chamber. Then, a mixture of hydrocarbon and hydrogen is supplied into a reaction chamber and is decomposed at least partially, thus forming a polycrystalline CVD diamond layer on the silicon. A middle layer consisting of single-crystal SiC is generated between the single crystal of silicon and the polycrystalline CVD diamond layer during deposition and growth process. Then, the single-crystal SiC supported by the polycrystalline CVD diamond layer is exposed by eliminating the silicon. Finally, by growing a semiconductor layer on the exposed single-crystal SiC, a single-crystal semiconductor-polycrystalline CVD diamond element is manufactured.