PLANE EMISSION SEMICONDUCTOR LASER, ITS ARRAY, PLANE EMISSION LED, ITS ARRAY amp; PLANE EMISSION PNPN ELEMENT

摘要

PURPOSE: To control polarization direction in a plane emission type semiconductor laser and plane emission type LED utilizing natural ultra-lattice. ;CONSTITUTION: A GaInP activated layer 3 forming a natural ultralattice is contained on a semiconductor GaAs substrate 1, and a plane light-emitting type semiconductor laser has a resonator in the direction normal to the plane of substrate 1. By this construction, it becomes possible to stably control the polarization direction in [110] direction. Also, in a semiconductor laser array with these elements integrated on the same substrate, it is possible to align the polarization direction of each element in [110] direction. This can be applied not only to semiconductor laser but also to a lightemitting element such as plane light-emitting type LED.;COPYRIGHT: (C)1993,JPO&Japio