首页> 外国专利> PLANE EMISSION-TYPE SEMICONDUCTOR LASER ARRAY, PLANE EMISSION-TYPE SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE AND INFORMATION PROCESSOR

PLANE EMISSION-TYPE SEMICONDUCTOR LASER ARRAY, PLANE EMISSION-TYPE SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE AND INFORMATION PROCESSOR

机译:平面发射型半导体激光器阵列,平面发射型半导体激光器设备,光传输设备和信息处理器

摘要

PROBLEM TO BE SOLVED: To provide a plane emission-type semiconductor laser array for allowing high output and polarization control of a fundamental lateral mode light.SOLUTION: A plane emission-type semiconductor laser array 10 includes: an element forming region 20 for forming a plurality of elements on a substrate; and a wiring forming region 30 for forming electrode wiring 50 and electrode pads 60. A plurality of mesas M1, M2 and M3 are formed in the element forming region 20 and metal wiring 70 is formed adjacently to the mesas M1, M2 and M3. The metal wiring 70 extends in parallel to an array direction of the mesas M1, M2 and M3, and anisotropic distortion in the same direction is added to active regions of the mesas M1, M2 and M3.
机译:解决的问题:提供一种平面发射型半导体激光器阵列,以允许对基本横向模式光进行高输出和偏振控制。解决方案:平面发射型半导体激光器阵列10包括:元件形成区域20,用于形成半导体器件。基板上的多个元件;多个台面M1,M2和M3形成在元件形成区域20中,并且金属配线70与台面M1,M2和M3相邻地形成。金属布线70平行于台面M1,M2和M3的排列方向延伸,并且沿相同方向的各向异性变形被添加到台面M1,M2和M3的有源区域。

著录项

  • 公开/公告号JP2013026487A

    专利类型

  • 公开/公告日2013-02-04

    原文格式PDF

  • 申请/专利权人 FUJI XEROX CO LTD;

    申请/专利号JP20110160627

  • 发明设计人 KUMEI MASAYA;

    申请日2011-07-22

  • 分类号H01S5/183;

  • 国家 JP

  • 入库时间 2022-08-21 16:59:03

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号