PIN JUNCTION PHOTOVOLTAIC ELEMENT HAVING I-TYPE SEMICONDUCTOR LAYERCOMPRISING NON-SINGLE CRYSTAL MATERIAL CONTAINING AT LEAST ZN, SE ANDH IN AN AMOUNT OF 1 TO 40 ATOMIC

摘要

ABSTRACT OF THE DISCLOSUREAn improved pin junction photovoltaic element whichgenerates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layerand an n-type semiconductor layer, characterized in thatat least said i-type semiconductor layer comprises amember selected from the group consisting of a ZnSe:Hdeposited film containing the hydrogen atoms in an amountof 1 to 4 atomic % and crystal grain domains in aproportion of 65 to 85 vol % per unit volume and aZnSe1-xTex:H deposited film containing the hydrogen atomsin an amount of 1 to 4 atomic % and crystal grain domainsin a proportion of 65 to 85 vol % per unit volume and alsocontaining the selenium atoms and the tellurium atoms in aSe/Te quantitative ratio of 1:9 to 3:7The pin junction photovoltaic element exhibits animproved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. Thepin junction photovoltaic element does not exhibit anyundesirable light-induced fatigue even upon continuous usefor a long period of time.