Hardening process against ionizing radiation for active electronic components, and large hardened components

摘要

The invention relates to the "hardening" (resistance to ionising radiations) of MOS-type components. In order to avoid the effects of these radiations (creation of electron-hole pairs), there is deposited on a substrate (1) of monocrystalline Si a layer of YSZ (2), and then a thin layer of monocrystalline Si (3). The other steps involved in manufacturing the components are the same as the conventional ones. IMAGE