The hardening process against ionizing radiation for active electronic components and hardened large building blocks.

摘要

The invention relates to the "hardening" (resistance to ionizing radiations) of the components of the mos type. In order to avoid the effects of these radiations (creation of electrons - holes), is deposited on a substrate 1 of monocrystalline si a layer of ysz 2, then a thin layer of monocrystalline si 3. The other stages of manufacture of the components are the same as usually.