Semiconductor device with means for increasing the breakdown voltage of a pn-junction

摘要

A semiconductor device comprising a semiconductor body (1, 2) with an island-shaped region (3) adjoining the surface, in which a contact pad (6) is provided above the island-shaped region (3) and separated therefrom by an insulating layer (5). The island-shaped region (3) forms a pn-junction (34) with an adjoining insulating region (4). According to the invention, the device is provided with means (40,41) for increasing the breakdown voltage of the pn-junction (34).