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A semiconductor device having merged bipolar and MOS transistors and process for making the same
A semiconductor device having merged bipolar and MOS transistors and process for making the same
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机译:具有合并的双极和MOS晶体管的半导体器件及其制造方法
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摘要
A semiconductor device (10) has a bipolar transistor merged with an MOS transistor, the two transistors being separated essentially by a sidewall spacer and the bipolar transistor being self-aligned to the MOS transistor. The MOS transistor includes a gate (22) and a source region (38). A drain region of the MOS transistor is also an active base region (27) of the bipolar transistor. The bipolar transistor further includes a first emitter region (40) formed in the active base region and a second emitter region (32) which is formed on the first emitter region and partially overlies the MOS transistor gate. The second emitter region is separated from the gate by a sidewall spacer (29) and an overlying dielectric layer (23).
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