Control Method of GaAs Single Crystal Growth by High Temperature 2-Temperature Region

摘要

The present invention relates to a method for controlling the growth of GaAs by a high temperature 2-temperature region, and more particularly, to a method for controlling the growth of single crystal of GaAs by controlling the temperature of the vapor pressure control portion at 1240C-Of GaAs single crystal.;Recently, the horizontal Bridgman method, which is the predominant type of GaAs single crystal growth method, uses the 3-temperature region growth method,_One(1240C-1260C), annealing temperature T₂(1100C to 1220C), low temperature T₃(600C-63C), the equipment is complex, and unstable factors such as thermal diffusion are inherent.;The present invention eliminates the 3-temperature region growth method and removes the low temperature portion (600C to 630C) to replace the As vapor pressure control with the internal pressure control based on the ideal gas state equation, And to remove unstable factors of thermal diffusion and to grow a homogeneous and stable GaAs single crystal.