Semiconductor pressure sensor with enhanced overload resistance - is protected by overlap of edge of diaphragm giving relief of tension under excessively high pressure

摘要

The diaphragm (6) extends between a recess (4) in the rear of a first semiconductor body (2) and a chamber (12) formed by a recess (9) in a second semiconductor body (3), sepd. from the first (2) by a nonconductive intermediate layer (11). The diaphragm (6) overlaps edges (13) of this layer (11) to relieve tension at its own edges (24) when deformed (6'). Deflection of the diaphragm is measured by capacitive electrodes on its face and on the opposite surface (14). ADVANTAGE - Excess pressures of more than 100 times max. measured value can be withstood with diaphragm compressed instead of being stretched.