This preconditioning, deletion and / or programming of a component of the eeprom memory

• 1. 一种EEPROM存储器编程精度校正电路及方法 [P] . 中国专利： CN112259150A . 2021-01-22
• 2. 一种提升EEPROM存储器编程精度的升压电路及其方法 [P] . 中国专利： CN106297887B . 2020.05.19
• 3. METHOD FOR PRECONDITIONING, ERASING AND / OR PROGRAMMING AN EEPROM MEMORY COMPONENT [P] . 法国专利： FR2627315A1 . 1989-08-18

  机译： 预处理，擦除和/或编程EEPROM存储器组件的方法

• 4. Production manner null of the component which restricts the programming voltage which is provided in the electric device which has the EEPROM memory electrolysis cell is stabilized [P] . 日本专利： JP2588058B2 . 1997-03-05

  机译： 限制具有EEPROM存储器电解单元的电子设备中设置的限制编程电压的组件的生产方式无效

• 5. Process for the manufacture of a component to limit the programming voltage and to stabilise the voltage incorporated in an electric device with EEPROM memory cells [P] . 欧洲知识产权局专利： EP0426241B1 . 1996-03-13

  机译： 制造零件的方法，以限制编程电压并稳定带有EEPROM存储单元的电子设备中的电压

• 1. Design of 1 kbit antifuse one time programmable memory IP using dual program voltage [J] . JIN Li-yan, JANG Ji-Hye, KIM Du-Hwi, 中南大学学报（英文版） . 2011,第001期
• 2. Conscious, Explicit Memory, Implicit Memory, and Instincts as the Four-Component Mind for the Mental Origins of Psychotherapy and Personality [J] . Dingyu Chung 行为与脑科学期刊（英文） . 2020,第011期
• 3. Magnetic Actuated Shape-memory Helical Microswimmers with Programmable Recovery Behaviors [J] . Fu Zhao, Weibin Rong, Lefeng Wang, 仿生工程学报（英文版） . 2021,第004期
• 4. Double-Poly EEPROM Cell for High Density Memories using Positive and Negative Voltage Programming [C] . Pio F., Paruzzi P., Baldi L., Solid State Device Research Conference, 1996. ESSDERC '96 . 1996
• 5. Simulation and control of secondary electron programming in flash EEPROM's. [D] . Kencke, David Leighton. 2000
• 6. Programming a crystalline shape memory polymer network with thermo- and photo-reversible bonds toward a single-component soft robot [O] . Binjie Jin, Huijie Song, Ruiqi Jiang, 2018
• 7. High Density and Low Voltage Programmable Scaled SONOS Nonvolatile Memory for the Byte and Flash-Erased Type EEPROMs [O] . 2002

• 1. Design of 1 kbit antifuse one time programmable memory IP using dual program voltage [J] . JIN Li-yan ,JANG Ji-Hye ,KIM Du-Hwi . 中南大学学报 . 2011,第001期
• 2. Effect of chemical component on shape memory effect of Fe-Mn-Si-Ni-C-RE shape memory alloy [J] . Naichao Si ,Zhihong Jia ,Longbiao Qi . 矿物冶金与材料学报 . 2004,第001期
• 3. EEPROM存储器电荷泵系统的抗辐照加固研究 [C] . 景欣 ,王佳宁 ,陆虹 . 第十一届全国抗辐射电子学与电磁脉冲学术交流会 . 2011
• 4. 嵌入式电可擦除可编程存储器（EEPROM）关键技术研究 [A] . 金荣华 . 2007