首页> 外国专利> PROCESS FOR PRODUCING A SILICON NITRIDE ARTICLE COATED WITH A DIAMOND FILM OR SIMILAR MATERIAL

PROCESS FOR PRODUCING A SILICON NITRIDE ARTICLE COATED WITH A DIAMOND FILM OR SIMILAR MATERIAL

机译:生产涂有金刚石膜或类似材料的氮化硅制品的方法

摘要

The invention relates to a process for coating a substrate formed of a silicon nitride material with a diamond film or the like by gas phase synthesis. BR/ This method comprises a first step of applying said film in a thickness of 0.5 to 2.0 mum at a temperature no higher than that at which the constituents of the intergranular boundary of the substrate volatilize, and a second step of synthesizing said film to a thickness of 5 to 100 mum at a temperature that activates the synthesis of said film. BR/ Application: production of a long-life article for cutting tools and optical or electronic materials, with greater resistance to wear and corrosion.
机译:本发明涉及通过气相合成用金刚石膜等涂覆由氮化硅材料形成的基板的方法。
该方法包括第一步,在不高于衬底的晶界边界成分挥发的温度下,以0.5至2.0μm的厚度涂覆所述薄膜,以及合成所述薄膜的第二步骤。在激活所述膜的合成的温度下达到5至100μm的厚度。
应用:生产长寿命的切削工具和光学或电子材料制品,具有更高的耐磨性和耐腐蚀性。

著录项

  • 公开/公告号FR2686599A1

    专利类型

  • 公开/公告日1993-07-30

    原文格式PDF

  • 申请/专利权人 NGK SPARK PLUG CO LTD;

    申请/专利号FR19930000653

  • 发明设计人 SATOSHI IIO;MASAKAZU WATANABE;

    申请日1993-01-22

  • 分类号C04B35/584;C04B41/50;C04B41/85;C04B41/87;C23C16/02;C23C16/27;C30B25/02;C30B29/04;

  • 国家 FR

  • 入库时间 2022-08-22 05:00:05

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