首页> 外国专利> Elimination of film defects due to hydrogen evolution during cathodic electrodeposition

Elimination of film defects due to hydrogen evolution during cathodic electrodeposition

机译:消除了由于在阴极电沉积过程中放出氢气而导致的薄膜缺陷

摘要

This invention is directed to a method for eliminating or reducing pinhole defects in cataphoretically deposited films without interfering with the electrolysis of water needed for electrodeposition. This method comprises decreasing the evolution of hydrogen gas at the cathode by adding a compound to the emulsion. This compound is reduced by the hydrogen produced at the cathode during the electrodeposition. The hydrogen reacts with the this non-gaseous compound rather than becoming hydrogen gas and forming bubbles which lead to pinhole defects.
机译:本发明涉及一种消除或减少电泳沉积膜中的针孔缺陷而不干扰电沉积所需水电解的方法。该方法包括通过向乳液中添加化合物来减少阴极处氢气的逸出。该化合物被电沉积过程中在阴极产生的氢还原。氢气与这种非气态化合物反应,而不是变成氢气并形成气泡,从而导致针孔缺陷。

著录项

  • 公开/公告号US5206277A

    专利类型

  • 公开/公告日1993-04-27

    原文格式PDF

  • 申请/专利权人 ROHM AND HAAS COMPANY;

    申请/专利号US19910724065

  • 发明设计人 MARK R. WINKLE;

    申请日1991-07-01

  • 分类号C08K5/32;

  • 国家 US

  • 入库时间 2022-08-22 04:58:24

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号