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Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step
Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step
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机译:使用氢后处理步骤和可选的氢预处理步骤沉积Si或Ge的热CVD膜的方法
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摘要
A process for depositing a thin semiconductor film includes the steps of depositing a thin film on a substrate by feeding onto the surface of the substrate being heated a gaseous starting material containing a constituent element of the thin film, and feeding excited hydrogen to the thin film without exposing the thin film to the ambient air. Disilane was fed together with hydrogen carrier gas onto a quartz substrate to deposit thereon a thin amorphous silicon film, to which excited hydrogen from a hydrogen plasma was then fed to modify the deposited thin silicon film. As a result, the photoconductivity of the thin silicon film was improved.
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