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Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process

机译：氢含量和粘合环境对高频PECVD工艺沉积氢化硅膜力学性能的影响

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Jhuma Gope; Sushil Kumar; A. Parashar; S. Dayal; C. M. S. Rauthan; P. C. Srivastava;
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年度 2012
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1. Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process [J] . JhumaGope, SushilKumar, A.Parashar, International Scholarly Research Notices . 2012,第4期

机译：氢含量和键合环境对高频PECVD工艺沉积氢化硅膜力学性能的影响
2. Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process [J] . Jhuma Gope, Sushil Kumar, A. Parashar, ISRN Nanomaterials . 2012,第2期

机译：氢含量和键合环境对高频PECVD工艺沉积氢化硅膜力学性能的影响
3. Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD [J] . Gunes Ibrahim, Sel Kivanc Thin Solid Films . 2017,第auga31期

机译：碳含量和等离子体功率对PECVD沉积氢化非晶碳化硅薄膜室温光致发光特性的影响
4. Electronic properties of PECVD hydrogenated amorphous silicon with predominantly monohydride bonding deposited at less than 150℃ [C] . Easwar Srinivasan, Gregory N. Parsons International workshop on active matrix liquid crystal displays;AMLCD; 19950925-26;19950925-26; Bethlehem, PA(US);Bethlehem, PA(US) . 1995

机译：PECVD氢化非晶硅的电子性质，主要在低于150℃的温度下沉积
5. Investigation of the film properties and deposition process of hydrogenated amorphous carbon films deposited with a microwave ECR plasma reactor. [D] . Kim, Bo Keun. 2000

机译：用微波ECR等离子体反应器沉积氢化非晶碳膜的膜性能和沉积过程的研究。
6. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon [O] . Sonia Ben Slama, Messaoud Hajji, Hatem Ezzaouia 2012

机译：通过PECVD在镍金属化多孔硅上沉积的非晶硅薄膜的结晶
7. Hydrogenated Amorphous Silicon Thin Films as Passivation Layers Deposited by Microwave Remote-PECVD for Heterojunction Solar Cells [O] . Min-Sung Jeon, Koichi Kamisako 2009

机译：氢化非晶硅薄膜作为钝化层，用于杂交偏光PECVD用于异质结太阳能电池

Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process

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