Synthesis method null of chemical vapor deposition method, choice etching modulo and Cu+1 ( diketonate) - olefin compound ones of copper metal

摘要

PURPOSE: To selectively deposit a pure and thin-gaged copper film by evaporation on a substrate surface by bringing a composite consisting of a volatile org. metal copper precursor material having a specific vapor pressure into contact with this substrate surface. ;CONSTITUTION: The volatile org. metal copper composite which has a vapor pressure of ≥0.01 mHg at 100°C and is expressed by the formula and the substrate are brought into contact with each other. In the formula, R₁, R₂ are each independently a 1 to 8 C perfluoroalkyl, R₂ is H or a 1 to 8C perfluoroalkyl; L is an unsatd. hydrocarbon ligand contg. a non-arom. unsatd. matter. Cu₊₁ (hexafluoroacetyl acetonate^-1)-1,5-cycooctadiene, etc., are used as this precursor. As a result, the selective vapor deposition of the pure copper film at a low vapor deposition temp. on the metallic or conductive part of the substrate surface is made possible. The vapor deposition reaction is convertable from the substrate surface to clean and selectively etched and vapor deposited copper.;COPYRIGHT: (C)1992,JPO