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CVD Of Copper From A Cu+1 Precursor And Water Vapor And Formation Of TiN- Encapsulated Submicron Copper Interconnects By Chemical-Mechanical Polishing

机译：通过化学机械抛光从Cu + 1前驱体中进行铜的CVD和水蒸气以及形成TiN封装的亚微米铜互连件

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来源
《》|1993年|P.123-124|共2页
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Gelatos; A.V.; Poon; S.;
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中图分类无线电电子学、电信技术;
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入库时间 2022-08-26 13:59:07

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2. Ultrathin Barrier Formation Using Combination of Manganese Oxide Encapsulation and Self-Aligned Copper Silicon Nitride Barriers for Copper Wiring in Future LSI Interconnects [J] . Kudo H., Haneda M., Ohtsuka N., Electron Devices, IEEE Transactions on . 2011,第10期

机译：结合锰氧化物封装和自对准氮化硅铜氮化物阻挡层用于未来LSI互连中的铜布线的超薄势垒形成
3. Effect of Slurry Selectivity on Dielectric Erosion and Copper Dishing in Copper Chemical-Mechanical Polishing [J] . K. Noh, N. Saka, J.-H. Chun CIRP Annals . 2004,第1期

机译：铜化学机械抛光中浆料选择性对电介质腐蚀和镀铜的影响
4. CVD Of Copper From A Cu+1 Precursor And Water Vapor And Formation Of TiN- Encapsulated Submicron Copper Interconnects By Chemical-Mechanical Polishing [C] . Gelatos A.V., Poon S., Institute of Electric and Electronic Engineer Symposium on VLSI Technology . 1993

机译：来自Cu + 1前体和水蒸气的CVD铜和水蒸气和由化学机械抛光形成镀锡的亚微米铜互连
5. Chemical-mechanical polishing of copper interconnects and dielectric films for microelectronic applications. [D] . Pandija, Sachin. 2007

机译：用于微电子应用的铜互连和介电膜的化学机械抛光。
6. Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper [O] . Steven Gottlieb, Nicolas Wöhrl, Stephan Schulz, -1

机译：通过等离子增强化学气相沉积（MW PE-CVD）在铜上同时合成纳米金刚石和石墨烯
7. Modeling of dielectric erosion and copper dishing in copper chemical-mechanical polishing [O] . Noh Kyungyoon 2005

机译：铜化学机械抛光中介电腐蚀和铜凹陷的模拟

CVD Of Copper From A Cu+1 Precursor And Water Vapor And Formation Of TiN- Encapsulated Submicron Copper Interconnects By Chemical-Mechanical Polishing

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