Tension introduction device null of the film surface in the film

• 1. 金属薄膜中阈值能氦引入方法 [P] . 中国专利： CN100366791C . 2008.02.06
• 2. 金属薄膜中阈值能氦引入方法 [P] . 中国专利： CN1670242A . 2005-09-21
• 3. Tension introduction modulo and the tension introduction device null in suspension film [P] . 日本专利： JPH0686777B2 . 1994-11-02

  机译： 张力引入模和悬浮膜中的张力引入装置无效

• 4. Tension introduction manner and device null of the film material in the film [P] . 日本专利： JP2781138B2 . 1998-07-30

  机译： 薄膜中薄膜材料的张力引入方式及装置无效

• 5. Tension introduction manner null of the opening and closing direction destal of the film material in the opening and closing type film [P] . 日本专利： JP2681474B2 . 1997-11-26

  机译： 开闭型薄膜中薄膜材料的开闭方向应力的张力引入方式为零

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• 1. PEROVSKITE SEMICONDUCTOR OPTOELECTRONIC DEVICES Surface passivation of perovskite film for efficient solar cells [J] . Yang(Michael) Yang . 半导体学报：英文版 . 2019,第4期
• 2. The effect ofγ-ray irradiation on the SOT magnetic films and Hall devices [J] . Tengzhi Yang ,Yan Cui ,Yanru Li . 半导体学报：英文版 . 2021,第2期
• 3. Effect of Organic Dopants in Dimetallophthalocyanine Thin Films: Application to Optoelectronic Devices [J] . María Elena Sánchez-Vergara ,Santiago Osorio-Lefler ,Pablo Osorio-Lefler . 材料物理与化学进展（英文） . 2019,第4期
• 4. The Effect of Tin on PECVD-Deposited Germanium Sulfide Thin Films for Resistive RAM Devices [J] . Rene Rodriguez ,Benjamin Poulter ,Mateo Gonzalez . 材料科学与应用期刊（英文） . 2017,第2期
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