PURPOSE:To find the value which quantitatively corresponds to the contrast between the exposure energy which corresponds to a bright part on a photosensitive material and the other exposure energy which corresponds to the dark part of the photosensitive material. CONSTITUTION:Each shot area of shot area groups 35A, ..., 350 arranged in one row on a wafer W is exposed to a line-and-space pattern image by changing the exposure at every shot area group and each shot area of shot area groups 38B,..., 38O arranged in one line on the wafer W is fully exposed to no pattern by changing the exposure at every shot area group. For the shot area group 38A which is not exposed twice, the value which corresponds to the contract between the minimum exposure energy quantity when the line-and-space image is resolved and the minimum exposure energy quantity when the line-and-space image is erased is found.
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