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FORMATION OF FERROELECTRIC FILM BY SOL-GEL METHOD AND PRODUCTION OF CAPACITOR, AND RAW MATERIAL SOLUTION THEREFOR
FORMATION OF FERROELECTRIC FILM BY SOL-GEL METHOD AND PRODUCTION OF CAPACITOR, AND RAW MATERIAL SOLUTION THEREFOR
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机译:溶胶-凝胶法形成铁电薄膜及电容器的生产及其原料的制备方法
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PURPOSE: To prepare a ferroelectric thin film having perovskite crystal structure by blending an organometallic compound of a metal element constituting the ferroelectric film with a stabilizer made of alkanol amine and/or β-diketone in a specific ratio, applying the blended raw material solution, drying and sintering at a relatively low temp. ;CONSTITUTION: At the time of forming the ferroelectric film by sol-gel method, the raw material solution containing the organometallic compound (e.g. lead fatty acid, titanium alkoxide and zirconium alkoxide) of the metal element constituting the ferroelectric film and the stabilizer made of alkanol amine and/or β-diketon in the concentration of 10≥ (stabilizer/total metallic atom) ≥4 by molar ratio of alkanol amine per total metal atom is prepared and is applied and dried. The prepared dried film is oxidized and sintered at 450-700°C to obtained the ferroelectric film (e.g. lead titanate zirconate). By utilizing this method, the oxidation and sintering temp is lowered at the time of forming the ferroelectric film.;COPYRIGHT: (C)1994,JPO
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