BASE SUBSTRATE FOR FORMING SEMICONDUCTOR THIN FILM, SOLID GROWTH METHOD FOR SEMICONDUCTOR THIN FILM AND PHOTOVOLTAIC DEVICE USING SUBSTRATE

摘要

PURPOSE: To obtain a photovoltaic device using a base substrate, on which the crystal of large grain diameter can be formed without being doped with impurities, and also a semiconductor thin film having less grain boundary and excellent crystallizability can be formed, and a thin film, which is formed by a solid growth method using the above-mentioned base substrate, is used. ;CONSTITUTION: After the silicon particles 3, which are scatteringly arranged on a substrate 1, have been buried by a SiO₂ film layer 4, the surface 3a of the silicon particles 3 is exposed by lapping the film layer 4. After an amorphous semiconductor thin film has been formed on the base substrate, it is crystallized by heating, and a polycrystalline silicon thin film, having large crystal grains, is formed. The polycrystalline silicon thin film formed as above is used as the semiconductor layer in the photoelectric conversion layer of a photoelectromotive force generating device.;COPYRIGHT: (C)1994,JPO&Japio