PURPOSE: To obtain the low resistant RuO2 film which prevents the generation of crack by heat-annealing RuOx film formed by sputtering, improving the binding property between crystal particles by sublimating RuO4 in the film and growing the crystal particle of RuO2. ;CONSTITUTION: By Dc magnetron sputtering, the RuOx film is formed by using metallic ruthenium (Ru) as the target I and the sputtering gas mixing argon and oxygen in a ratio of Ar: O2 of (8:2) to (6:4). The condition of this time is 1-3W/cm2 DC power density and 10-20mTorr pressure in sputtering chamber 3. After the film is deposited, the film is heat-annealed at 500-900°C in an inactive atmosphere. Heat treatment time is about 30-120min.;COPYRIGHT: (C)1994,JPO&Japio
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机译：目的：获得低电阻的RuO 2 膜，该膜可通过对溅射形成的RuO x 膜进行热退火来防止裂纹的产生，并通过升华提高晶体颗粒之间的结合性能在膜中加入RuO 4 ，并生长RuO 2 的晶体颗粒。 ;组成：通过Dc磁控溅射，以金属钌（Ru）为靶I，以氩气和氧气按Ar：O 的比例混合溅射气体形成RuO x 膜。 （8：2）至（6：4）中的2 。这次的条件是溅射室3中的1-3W / cm 2 DC功率密度和10-20mTorr压力。沉积膜之后，将膜在500-900℃下加热退火。在不活跃的气氛中。热处理时间约为30-120分钟。;版权：（C）1994，JPO＆Japio
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