METHOD FOR FORMING A RUTHENIUM THIN FILM BY AN ATOMIC LAYER DEPOSITION AT A LOW TEMPERATURE AND THE RUTHENIUM THIN FILM USING THE SAME

摘要

PURPOSE: A method for forming a ruthenium thin film by an atomic layer deposition and the ruthenium thin film using the same are provided to improve a deposition rate by using a ruthenium-containing precursor of C14H18Ru of which metal valence electron is 0.;CONSTITUTION: A ruthenium-containing precursor is supplied to a substrate within a chamber. The ruthenium-containing precursor is purged from the chamber. A reaction gas is supplied to the substrate. The reaction gas is purged from the chamber. The ruthenium-containing precursor is C14H18Ru.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) First deposition cycle; (BB) Ru-containing precursor; (CC) Reaction gas; (DD) Purge gas; (EE) Time