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An integrated circuit self-protected against reversal of the supply battery polarity

机译:具有自我保护功能的集成电路,可防止电源电池极性反转

摘要

An integrated circuit (1) self-protected agianst reversal of the supply battery (2) polarity comprises a first DMOS power transistor (T1) connected with its source electrode (S1) side to an electric load (R1) to be driven toward ground, and a second, protective DMOS transistor (T2) which is connected with its source electrode (S2) side to a positive pole (Vc) of the battery (2) and with its drain electrode (D2) side to the drain electrode (D1) of the first transistor (T1). The first T1) and second (T2) transistors have in common the drain region formed on a single pod (9) in the semiconductor substrate (4).
机译:集成电路(1)的电源电池(2)极性的自保护反向转换包括第一DMOS功率晶体管(T1),该第一DMOS功率晶体管(T1)的源电极(S1)侧连接到电负载(R1),以被驱动为接地;第二保护性DMOS晶体管(T2),其源极(S2)侧与电池(2)的正极(Vc)连接,漏极(D2)侧与漏极(D1)连接第一晶体管(T1)的栅极。第一(T1)和第二(T2)晶体管共同具有形成在半导体衬底(4)中的单个荚(9)上的漏极区。

著录项

  • 公开/公告号EP0360991B1

    专利类型

  • 公开/公告日1994-08-31

    原文格式PDF

  • 申请/专利权人 SGS-THOMSON MICROELECTRONICS S.R.L.;

    申请/专利号EP19890112711

  • 发明设计人 CONTIERO CLAUDIO;MURARI BRUNO;

    申请日1989-07-12

  • 分类号H02H11/00;H01L27/02;

  • 国家 EP

  • 入库时间 2022-08-22 04:40:02

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