Independently addressable semiconductor diode lasers with integral low loss passive waveguides

摘要

Within a monolithic semiconductor structure (100), passive waveguides (98) couple co-axially offset generation waveguides (94) for generating light waves to mirrors. The passive waveguides (98) can also couple detecting regions (96; Fig. 10) for measuring the light intensity within the laser cavity and adjustable absorption regions (126; Fig. 11) for tuning the wavelength (λ₁-λ₄) of the lightwaves generated by the generation waveguides (94).