Independently addressable semiconductor diode lasers with integral low loss passive waveguides

摘要

Within a monolithic semiconductor structure, passive waveguides couple laterally offset generation waveguides for generating light waves to mirrors. The passive waveguides can also couple detecting regions for measuring the light intensity within the laser cavity and adjustable absorption regions for tuning the wavelength of the lightwaves generated by the generation waveguides. Electrically passive interconnection of functional units within the laser cavity allows the fundamental units to be laterally offset. The lateral offset and passive optical interconnects increases the area for electrical crossover.