Fabrication of Lower Layer Oxide Film of 3-layer Composite Dielectric Film

摘要

The present invention relates to a method for manufacturing a lower oxide film of a three-layer composite structure dielectric film made of ONO (Oxide-Nitride-Oxide)₂Layer composite structure dielectric film, wherein an oxide film is formed by using only pure air flow without using a pure air flow. In this method, since an oxide film is formed by controlling the flow and intensity of air, It is a method of manufacturing a lower oxide film of a three-layer composite structure dielectric film which can prevent consumption and loss of material, obtain uniformity of oxide film, and have a high yield of 97% or more even in the result of CCST (Constant Current Strength Test).